- Packaging :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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754
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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VIEW |
1,824
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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VIEW |
618
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
