Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSS139H6327XTSA1
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Infineon Technologies MOSFET N-CH 250V 100MA SOT23 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 360mW (Ta) N-Channel Depletion Mode 250V 100mA (Ta) 14 Ohm @ 100µA, 10V 1V @ 56µA 3.5nC @ 5V 76pF @ 25V 0V, 10V ±20V
BSS139H6327XTSA1
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3,335
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Infineon Technologies MOSFET N-CH 250V 100MA SOT23 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 360mW (Ta) N-Channel Depletion Mode 250V 100mA (Ta) 14 Ohm @ 100µA, 10V 1V @ 56µA 3.5nC @ 5V 76pF @ 25V 0V, 10V ±20V
BSS139H6327XTSA1
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2,738
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Infineon Technologies MOSFET N-CH 250V 100MA SOT23 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 360mW (Ta) N-Channel Depletion Mode 250V 100mA (Ta) 14 Ohm @ 100µA, 10V 1V @ 56µA 3.5nC @ 5V 76pF @ 25V 0V, 10V ±20V