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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,815
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
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VIEW |
747
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
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VIEW |
982
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
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VIEW |
2,541
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
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VIEW |
1,377
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,353
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
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VIEW |
1,953
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
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|
VIEW |
709
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,313
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
