Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI8472DB-T2-E1
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Vishay Siliconix MOSFET N-CH 20V 3.3A MICRO TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA 4-Micro Foot (1x1) 780mW (Ta) N-Channel 20V - 44 mOhm @ 1.5A, 4.5V 900mV @ 250µA 18nC @ 8V 630pF @ 10V 1.5V, 4.5V ±8V
SI8472DB-T2-E1
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Vishay Siliconix MOSFET N-CH 20V 3.3A MICRO TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA 4-Micro Foot (1x1) 780mW (Ta) N-Channel 20V - 44 mOhm @ 1.5A, 4.5V 900mV @ 250µA 18nC @ 8V 630pF @ 10V 1.5V, 4.5V ±8V
SI8472DB-T2-E1
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2,860
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Vishay Siliconix MOSFET N-CH 20V 3.3A MICRO TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA 4-Micro Foot (1x1) 780mW (Ta), 1.8W (Tc) N-Channel 20V - 44 mOhm @ 1.5A, 4.5V 900mV @ 250µA 18nC @ 8V 630pF @ 10V 1.5V, 4.5V ±8V