Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF5801TRPBF
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Infineon Technologies MOSFET N-CH 200V 600MA 6-TSOP HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) N-Channel - 200V 600mA (Ta) 2.2 Ohm @ 360mA, 10V 5.5V @ 250µA 3.9nC @ 10V 88pF @ 25V 10V ±30V
IRF5801TRPBF
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1,753
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Infineon Technologies MOSFET N-CH 200V 600MA 6-TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) N-Channel - 200V 600mA (Ta) 2.2 Ohm @ 360mA, 10V 5.5V @ 250µA 3.9nC @ 10V 88pF @ 25V 10V ±30V
IRF5801TRPBF
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2,513
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Infineon Technologies MOSFET N-CH 200V 600MA 6-TSOP HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) N-Channel - 200V 600mA (Ta) 2.2 Ohm @ 360mA, 10V 5.5V @ 250µA 3.9nC @ 10V 88pF @ 25V 10V ±30V