- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,824
In-stock
|
Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANE | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 2A, 10V | 2.2V @ 250µA | 3.4nC @ 4.5V | 159pF @ 15V | 4V, 10V | +20V, -25V | |||
|
|
VIEW |
3,603
In-stock
|
Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANE | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 2A, 10V | 2.2V @ 250µA | 3.4nC @ 4.5V | 159pF @ 15V | 4V, 10V | +20V, -25V | |||
|
|
VIEW |
1,894
In-stock
|
Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANE | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 2A, 10V | 2.2V @ 250µA | 3.4nC @ 4.5V | 159pF @ 15V | 4V, 10V | +20V, -25V | |||
|
VIEW |
2,140
In-stock
|
Central Semiconductor Corp | MOSFET N-CH 100V 3A SOT-223 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | - | 100V | 3A (Ta) | 150 mOhm @ 2A, 10V | 4V @ 250µA | 15nC @ 10V | 975pF @ 25V | 10V | 20V | |||
|
|
VIEW |
948
In-stock
|
Central Semiconductor Corp | MOSFET N-CH 100V 3A SOT-223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | - | 100V | 3A (Ta) | 150 mOhm @ 2A, 10V | 4V @ 250µA | 15nC @ 10V | 975pF @ 25V | 10V | 20V | |||
|
|
VIEW |
666
In-stock
|
Central Semiconductor Corp | MOSFET N-CH 100V 3A SOT-223 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | - | 100V | 3A (Ta) | 150 mOhm @ 2A, 10V | 4V @ 250µA | 15nC @ 10V | 975pF @ 25V | 10V | 20V | |||
|
VIEW |
2,882
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 38V 2A | U-MOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 38V | 2A (Ta) | 150 mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | 120pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
3,779
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 38V 2A | U-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 38V | 2A (Ta) | 150 mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | 120pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
2,871
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 38V 2A | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 38V | 2A (Ta) | 150 mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | 120pF @ 10V | 4V, 10V | ±20V | |||
