Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRLTS6342TRPBF
RFQ
VIEW
RFQ
1,059
In-stock
Infineon Technologies MOSFET N-CH 30V 8.3A 6TSOP HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 2W (Ta) N-Channel - 30V 8.3A (Ta) 17.5 mOhm @ 8.3A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1010pF @ 25V 2.5V, 4.5V ±12V
IRLTS6342TRPBF
RFQ
VIEW
RFQ
1,742
In-stock
Infineon Technologies MOSFET N-CH 30V 8.3A 6TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 2W (Ta) N-Channel - 30V 8.3A (Ta) 17.5 mOhm @ 8.3A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1010pF @ 25V 2.5V, 4.5V ±12V
IRLTS6342TRPBF
RFQ
VIEW
RFQ
1,217
In-stock
Infineon Technologies MOSFET N-CH 30V 8.3A 6TSOP HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 2W (Ta) N-Channel - 30V 8.3A (Ta) 17.5 mOhm @ 8.3A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1010pF @ 25V 2.5V, 4.5V ±12V