Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFTS8342TRPBF
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Infineon Technologies MOSFET N-CH 30V 8.2A 6TSOP HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 2W (Ta) N-Channel - 30V 8.2A (Ta) 19 mOhm @ 8.2A, 10V 2.35V @ 25µA 4.8nC @ 4.5V 560pF @ 25V 4.5V, 10V ±20V
IRFTS8342TRPBF
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718
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Infineon Technologies MOSFET N-CH 30V 8.2A 6TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 2W (Ta) N-Channel - 30V 8.2A (Ta) 19 mOhm @ 8.2A, 10V 2.35V @ 25µA 4.8nC @ 4.5V 560pF @ 25V 4.5V, 10V ±20V
IRFTS8342TRPBF
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3,225
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Infineon Technologies MOSFET N-CH 30V 8.2A 6TSOP HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 2W (Ta) N-Channel - 30V 8.2A (Ta) 19 mOhm @ 8.2A, 10V 2.35V @ 25µA 4.8nC @ 4.5V 560pF @ 25V 4.5V, 10V ±20V