Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V
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Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V
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Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V