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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK39A60W,S4VX	RFQ VIEW	PDF RFQ	963 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 39A TO220-3		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	-	600V	38.8A (Ta)	65 mOhm @ 19.4A, 10V	3.7V @ 1.9mA	110nC @ 10V	4100pF @ 300V	10V	±30V
	TK39J60W,S1VQ	RFQ VIEW	PDF RFQ	3,185 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 38.8A TO-3P		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	270W (Tc)	N-Channel	Super Junction	600V	38.8A (Ta)	65 mOhm @ 19.4A, 10V	3.7V @ 1.9mA	110nC @ 10V	4100pF @ 300V	10V	±30V
	TK39J60W5,S1VQ	RFQ VIEW	PDF RFQ	3,498 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 38.8A TO-3P(N)		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	270W (Tc)	N-Channel	Super Junction	600V	38.8A (Ta)	65 mOhm @ 19.4A, 10V	3.7V @ 1.9mA	135nC @ 10V	4100pF @ 300V	10V	±30V
	TK39N60W,S1VF	RFQ VIEW	PDF RFQ	2,488 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 38.8A TO247		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	270W (Tc)	N-Channel	Super Junction	600V	38.8A (Ta)	65 mOhm @ 19.4A, 10V	3.7V @ 1.9mA	110nC @ 10V	4100pF @ 300V	10V	±30V

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