Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK25N60X,S1F
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1,527
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 180W (Tc) N-Channel - 600V 25A (Ta) 125 mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40nC @ 10V 2400pF @ 300V 10V ±30V
TK25A60X,S5X
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846
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-3PN DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 25A (Ta) 125 mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40nC @ 10V 2400pF @ 300V 10V ±30V
TK25E60X,S1X
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1,531
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-220AB DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 180W (Tc) N-Channel - 600V 25A (Ta) 125 mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40nC @ 10V 2400pF @ 300V 10V ±30V