Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQA48N20
RFQ
VIEW
RFQ
900
In-stock
ON Semiconductor MOSFET N-CH 200V 48A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 280W (Tc) N-Channel - 200V 48A (Tc) 50 mOhm @ 24A, 10V 5V @ 250µA 130nC @ 10V 5000pF @ 25V 10V ±30V
IXTQ48N20T
RFQ
VIEW
RFQ
2,202
In-stock
IXYS MOSFET N-CH 200V 48A TO-3P Trench™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 250W (Tc) N-Channel - 200V 48A (Tc) 50 mOhm @ 24A, 10V 4.5V @ 250µA 60nC @ 10V 3090pF @ 25V 10V ±30V
IXTA48N20T
RFQ
VIEW
RFQ
3,559
In-stock
IXYS MOSFET N-CH 200V 48A TO-263 Trench™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 250W (Tc) N-Channel - 200V 48A (Tc) 50 mOhm @ 24A, 10V 4.5V @ 250µA 60nC @ 10V 3090pF @ 25V 10V ±30V
IXTP48N20T
RFQ
VIEW
RFQ
1,505
In-stock
IXYS MOSFET N-CH 200V 48A TO-220 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 200V 48A (Tc) 50 mOhm @ 24A, 10V 4.5V @ 250µA 60nC @ 10V 3000pF @ 25V 10V ±30V