Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC027N03S G
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2,355
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.8W (Ta), 89W (Tc) N-Channel - 30V 25A (Ta), 100A (Tc) 2.7 mOhm @ 50A, 10V 2V @ 90µA 51nC @ 5V 6540pF @ 15V 4.5V, 10V ±20V
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1,572
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Infineon Technologies MOSFET N-CH 60V 100A 8TDSON OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 83W (Tc) N-Channel - 60V 100A (Tc) 2.7 mOhm @ 50A, 10V 2.3V @ 49µA 30nC @ 4.5V 4400pF @ 30V 4.5V, 10V ±20V
BSC027N04LSGATMA1
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3,104
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 83W (Tc) N-Channel - 40V 24A (Ta), 100A (Tc) 2.7 mOhm @ 50A, 10V 2V @ 49µA 85nC @ 10V 6800pF @ 20V 4.5V, 10V ±20V
BSC027N04LSGATMA1
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3,864
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 83W (Tc) N-Channel - 40V 24A (Ta), 100A (Tc) 2.7 mOhm @ 50A, 10V 2V @ 49µA 85nC @ 10V 6800pF @ 20V 4.5V, 10V ±20V
BSC027N04LSGATMA1
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1,022
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 83W (Tc) N-Channel - 40V 24A (Ta), 100A (Tc) 2.7 mOhm @ 50A, 10V 2V @ 49µA 85nC @ 10V 6800pF @ 20V 4.5V, 10V ±20V
TK100A06N1,S4X
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2,564
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 100A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 60V 100A (Tc) 2.7 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 10500pF @ 30V 10V ±20V