Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFB4620PBF
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Infineon Technologies MOSFET N-CH 200V 25A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 144W (Tc) N-Channel 200V 25A (Tc) 72.5 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V
IRFB5620PBF
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Infineon Technologies MOSFET N-CH 200V 25A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 144W (Tc) N-Channel 200V 25A (Tc) 72.5 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V