Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFB100N50Q3
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2,408
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IXYS MOSFET N-CH 500V 100A PLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1560W (Tc) N-Channel - 500V 100A (Tc) 49 mOhm @ 50A, 10V 6.5V @ 8mA 255nC @ 10V 13800pF @ 25V 10V ±30V
IXFN100N50Q3
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2,638
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IXYS MOSFET N-CH 500V 82A SOT-227 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 960W (Tc) N-Channel - 500V 82A (Tc) 49 mOhm @ 50A, 10V 6.5V @ 8mA 255nC @ 10V 13800pF @ 25V 10V ±30V
IXFB100N50P
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RFQ
3,698
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IXYS MOSFET N-CH 500V 100A PLUS264 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) - Through Hole TO-264-3, TO-264AA PLUS264™ 1890W (Tc) N-Channel - 500V 100A (Tc) 49 mOhm @ 50A, 10V 5V @ 8mA 240nC @ 10V 20000pF @ 25V 10V ±30V
IXFN100N50P
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RFQ
2,688
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IXYS MOSFET N-CH 500V 90A SOT-227B PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1040W (Tc) N-Channel - 500V 90A (Tc) 49 mOhm @ 50A, 10V 5V @ 8mA 240nC @ 10V 20000pF @ 25V 10V ±30V