- Manufacture :
- Series :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,450
In-stock
|
IXYS | MOSFET N-CH 1000V 22A ISOPLUS227 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 500W (Tc) | N-Channel | - | 1000V | 22A (Tc) | 390 mOhm @ 12A, 10V | 5V @ 8mA | 250nC @ 10V | 7000pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,918
In-stock
|
Microsemi Corporation | MOSFET N-CH 800V 25A D3PAK | POWER MOS 8™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D3Pak | 625W (Tc) | N-Channel | - | 800V | 25A (Tc) | 390 mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | 4595pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,344
In-stock
|
Microsemi Corporation | MOSFET N-CH 800V 25A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 625W (Tc) | N-Channel | - | 800V | 25A (Tc) | 390 mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | 4595pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,256
In-stock
|
IXYS | MOSFET N-CH 1KV 24A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 568W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | 10V | ±20V | |||
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|
VIEW |
867
In-stock
|
IXYS | MOSFET N-CH 1KV 22A ISOPLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 416W (Tc) | N-Channel | - | 1000V | 22A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,200
In-stock
|
IXYS | MOSFET N-CH 1000V 24A PLUS 247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,393
In-stock
|
IXYS-RF | MOSFET N-CH 1000V 24A TO264 | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 (IXFK) | 560W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 195nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
609
In-stock
|
IXYS-RF | MOSFET N-CH 1000V 24A SOT227B | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 600W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 195nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
940
In-stock
|
IXYS-RF | MOSFET N-CH 1000V 24A PLUS247-3 | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 195nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,197
In-stock
|
IXYS | MOSFET N-CH 1KV 24A TO-264AA | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 560W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | 10V | ±20V | |||
