Package / Case :
Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPZ65R019C7XKSA1
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2,256
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Infineon Technologies MOSFET N-CH 650V TO247-4 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 PG-TO247-4 446W (Tc) N-Channel - 650V 75A (Tc) 19 mOhm @ 58.3A, 10V 4V @ 2.92mA 215nC @ 10V 9900pF @ 400V 10V ±20V
IPW65R019C7FKSA1
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2,573
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Infineon Technologies MOSFET N-CH 650V 75A TO247-3 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 446W (Tc) N-Channel - 650V 75A (Tc) 19 mOhm @ 58.3A, 10V 4V @ 2.92mA 215nC @ 10V 9900pF @ 400V 10V ±20V