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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFL024Z	RFQ VIEW	PDF RFQ	779 In-stock	Infineon Technologies	MOSFET N-CH 55V 5.1A SOT223		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223	1W (Ta)	N-Channel	-	55V	5.1A (Ta)	57.5 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	340pF @ 25V	10V	±20V
	IRFL024ZPBF	RFQ VIEW	PDF RFQ	3,285 In-stock	Infineon Technologies	MOSFET N-CH 55V 5.1A SOT223		HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223	1W (Ta)	N-Channel	-	55V	5.1A (Ta)	57.5 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	340pF @ 25V	10V	±20V
	IRFL024ZTRPBF	RFQ VIEW	PDF RFQ	3,002 In-stock	Infineon Technologies	MOSFET N-CH 55V 5.1A SOT223		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223	1W (Ta)	N-Channel	-	55V	5.1A (Ta)	57.5 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	340pF @ 25V	10V	±20V
	IRFL024ZTRPBF	RFQ VIEW	PDF RFQ	3,019 In-stock	Infineon Technologies	MOSFET N-CH 55V 5.1A SOT223		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223	1W (Ta)	N-Channel	-	55V	5.1A (Ta)	57.5 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	340pF @ 25V	10V	±20V
	IRFL024ZTRPBF	RFQ VIEW	PDF RFQ	3,918 In-stock	Infineon Technologies	MOSFET N-CH 55V 5.1A SOT223		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223	1W (Ta)	N-Channel	-	55V	5.1A (Ta)	57.5 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	340pF @ 25V	10V	±20V

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