Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH3212PS
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RFQ
1,650
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Transphorm MOSFET N-CH 650V 27A TO220 - Active Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 104W (Tc) N-Channel 650V 27A (Tc) 72 mOhm @ 17A, 8V 2.6V @ 400uA 14nC @ 8V 1130pF @ 400V 8V ±18V