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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Rohm Semiconductor | MOSFET N-CH 1200V 10A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 85W (Tc) | N-Channel | 1200V | 10A (Tc) | 585 mOhm @ 3A, 18V | 4V @ 900µA | 27nC @ 18V | 463pF @ 800V | 18V | +22V, -6V | |||
