Packaging :
Package / Case :
Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFP3703
RFQ
VIEW
RFQ
3,283
In-stock
Infineon Technologies MOSFET N-CH 30V 210A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 3.8W (Ta), 230W (Tc) N-Channel - 30V 210A (Tc) 2.8 mOhm @ 76A, 10V 4V @ 250µA 209nC @ 10V 8250pF @ 25V 7V, 10V ±20V
IRF3703PBF
RFQ
VIEW
RFQ
2,584
In-stock
Infineon Technologies MOSFET N-CH 30V 210A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 230W (Tc) N-Channel - 30V 210A (Tc) 2.8 mOhm @ 76A, 10V 4V @ 250µA 209nC @ 10V 8250pF @ 25V 7V, 10V ±20V
IRFP3703PBF
RFQ
VIEW
RFQ
2,837
In-stock
Infineon Technologies MOSFET N-CH 30V 210A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 3.8W (Ta), 230W (Tc) N-Channel - 30V 210A (Tc) 2.8 mOhm @ 76A, 10V 4V @ 250µA 209nC @ 10V 8250pF @ 25V 7V, 10V ±20V