Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRFP2907Z
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3,274
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Infineon Technologies MOSFET N-CH 75V 170A TO247AC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel - 75V 170A (Tc) 4.5 mOhm @ 90A, 10V 4V @ 250µA 270nC @ 10V 7500pF @ 25V 10V ±20V
IPD90P03P404ATMA1
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2,728
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Infineon Technologies MOSFET P-CH 30V 90A TO252-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 137W (Tc) P-Channel - 30V 90A (Tc) 4.5 mOhm @ 90A, 10V 4V @ 253µA 130nC @ 10V 10300pF @ 25V 10V ±20V
IPD90P03P404ATMA1
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2,126
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Infineon Technologies MOSFET P-CH 30V 90A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 137W (Tc) P-Channel - 30V 90A (Tc) 4.5 mOhm @ 90A, 10V 4V @ 253µA 130nC @ 10V 10300pF @ 25V 10V ±20V
IPD90P03P404ATMA1
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2,830
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Infineon Technologies MOSFET P-CH 30V 90A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 137W (Tc) P-Channel - 30V 90A (Tc) 4.5 mOhm @ 90A, 10V 4V @ 253µA 130nC @ 10V 10300pF @ 25V 10V ±20V
IRFP2907ZPBF
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2,233
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Infineon Technologies MOSFET N-CH 75V 90A TO-247AC HEXFET® Not For New Designs Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel - 75V 90A (Tc) 4.5 mOhm @ 90A, 10V 4V @ 250µA 270nC @ 10V 7500pF @ 25V 10V ±20V