Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMG9N65CT
RFQ
VIEW
RFQ
3,774
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Diodes Incorporated MOSFET N-CH 650V 9A TO220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 165W (Tc) N-Channel 650V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 5V @ 250µA 39nC @ 10V 2310pF @ 25V 10V ±30V
DMG9N65CT
RFQ
VIEW
RFQ
1,514
In-stock
Diodes Incorporated MOSFET N-CH 650V 9A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 165W (Tc) N-Channel 650V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 5V @ 250µA 39nC @ 10V 2310pF @ 25V 10V ±30V
AOTF9N90
RFQ
VIEW
RFQ
2,698
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 900V 9A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 50W (Tc) N-Channel 900V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 4.5V @ 250µA 58nC @ 10V 2560pF @ 25V 10V ±30V
DMG9N65CTI
RFQ
VIEW
RFQ
859
In-stock
Diodes Incorporated MOSFET N CH 650V 9A ITO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB 13W (Tc) N-Channel 650V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 5V @ 250µA 39nC @ 10V 2310pF @ 25V 10V ±30V
AOK9N90
RFQ
VIEW
RFQ
3,051
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 900V 9A TO247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 368W (Tc) N-Channel 900V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 4.5V @ 250µA 58nC @ 10V 2560pF @ 25V 10V ±30V
TK9A90E,S4X
RFQ
VIEW
RFQ
3,677
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO220SIS π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel 900V 9A (Ta) 1.3 Ohm @ 4.5A, 10V 4V @ 900µA 46nC @ 10V 2000pF @ 25V 10V ±30V
TK9J90E,S1E
RFQ
VIEW
RFQ
3,303
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO-3PN - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 250W (Tc) N-Channel 900V 9A (Ta) 1.3 Ohm @ 4.5A, 10V 4V @ 900µA 46nC @ 10V 2000pF @ 25V 10V ±30V