Packaging :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFP260MPBF
RFQ
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RFQ
3,593
In-stock
Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V
IRFP260NPBF
RFQ
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RFQ
2,800
In-stock
Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V