Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP300L6327HUSA1
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2,999
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Infineon Technologies MOSFET N-CH 800V 190MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V
BSP300 E6327
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RFQ
3,753
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Infineon Technologies MOSFET N-CH 800V 190MA SOT-223 SIPMOS® Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V
BSP300H6327XUSA1
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RFQ
2,155
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Infineon Technologies MOSFET N-CH 800V 190MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V
BSP300H6327XUSA1
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RFQ
1,342
In-stock
Infineon Technologies MOSFET N-CH 800V 190MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V
BSP300H6327XUSA1
RFQ
VIEW
RFQ
3,929
In-stock
Infineon Technologies MOSFET N-CH 800V 190MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V