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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF6201PBF	RFQ VIEW	PDF RFQ	3,627 In-stock	Infineon Technologies	MOSFET N-CH 20V 27A 8-SO		HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	20V	27A (Ta)	2.45 mOhm @ 27A, 4.5V	1.1V @ 100µA	195nC @ 4.5V	8555pF @ 16V	2.5V, 4.5V	±12V
	IRF6201TRPBF	RFQ VIEW	PDF RFQ	1,871 In-stock	Infineon Technologies	MOSFET N-CH 20V 27A 8-SOIC		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	20V	27A (Ta)	2.45 mOhm @ 27A, 4.5V	1.1V @ 100µA	195nC @ 4.5V	8555pF @ 16V	2.5V, 4.5V	±12V
	IRF6201TRPBF	RFQ VIEW	PDF RFQ	3,206 In-stock	Infineon Technologies	MOSFET N-CH 20V 27A 8-SOIC		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	20V	27A (Ta)	2.45 mOhm @ 27A, 4.5V	1.1V @ 100µA	195nC @ 4.5V	8555pF @ 16V	2.5V, 4.5V	±12V
	IRF6201TRPBF	RFQ VIEW	PDF RFQ	3,386 In-stock	Infineon Technologies	MOSFET N-CH 20V 27A 8-SOIC		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	20V	27A (Ta)	2.45 mOhm @ 27A, 4.5V	1.1V @ 100µA	195nC @ 4.5V	8555pF @ 16V	2.5V, 4.5V	±12V

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