Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF7811AVPBF
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2,521
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Infineon Technologies MOSFET N-CH 30V 10.8A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 10.8A (Ta) 14 mOhm @ 15A, 4.5V 3V @ 250µA 26nC @ 5V 1801pF @ 10V 4.5V ±20V
IRF7811AVTR
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3,512
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Infineon Technologies MOSFET N-CH 30V 10.8A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 10.8A (Ta) 14 mOhm @ 15A, 4.5V 3V @ 250µA 26nC @ 5V 1801pF @ 10V 4.5V ±20V
IRF7811AVTRPBF
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3,242
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Infineon Technologies MOSFET N-CH 30V 10.8A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 10.8A (Ta) 14 mOhm @ 15A, 4.5V 3V @ 250µA 26nC @ 5V 1801pF @ 10V 4.5V ±20V
IRF7811AVTRPBF
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RFQ
2,941
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Infineon Technologies MOSFET N-CH 30V 10.8A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 10.8A (Ta) 14 mOhm @ 15A, 4.5V 3V @ 250µA 26nC @ 5V 1801pF @ 10V 4.5V ±20V
IRF7811AVTRPBF
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RFQ
1,355
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Infineon Technologies MOSFET N-CH 30V 10.8A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 10.8A (Ta) 14 mOhm @ 15A, 4.5V 3V @ 250µA 26nC @ 5V 1801pF @ 10V 4.5V ±20V