Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQB27N25TM_AM002
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2,139
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ON Semiconductor MOSFET N-CH 250V 25.5A D2PAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 180W (Tc) N-Channel - 250V 25.5A (Tc) 110 mOhm @ 12.75A, 10V 5V @ 250µA 65nC @ 10V 2450pF @ 25V 10V ±30V
FQI27N25TU
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3,550
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ON Semiconductor MOSFET N-CH 250V 25.5A I2PAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 180W (Tc) N-Channel - 250V 25.5A (Tc) 110 mOhm @ 12.75A, 10V 5V @ 250µA 65nC @ 10V 2450pF @ 25V 10V ±30V
FQP27N25
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RFQ
2,990
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ON Semiconductor MOSFET N-CH 250V 25.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 250V 25.5A (Tc) 110 mOhm @ 12.75A, 10V 5V @ 250µA 65nC @ 10V 2450pF @ 25V 10V ±30V
FQI27N25TU-F085
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RFQ
1,796
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ON Semiconductor MOSFET N-CH 250V 25.5A I2PAK Automotive, AEC-Q101 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 417W (Tc) N-Channel - 250V 25.5A (Tc) 110 mOhm @ 12.75A, 10V 5V @ 250µA 65nC @ 10V 1800pF @ 25V 10V ±30V