Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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R5013ANJTL
RFQ
VIEW
RFQ
3,011
In-stock
Rohm Semiconductor MOSFET N-CH 10V DRIVE LPTS - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 100W (Tc) N-Channel - 500V 13A (Ta) 380 mOhm @ 6.5A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
R5013ANXFU6
RFQ
VIEW
RFQ
1,823
In-stock
Rohm Semiconductor MOSFET N-CH 500V 13A TO-220FM - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel - 500V 13A (Ta) 380 mOhm @ 6.5A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
TK13A65U(STA4,Q,M)
RFQ
VIEW
RFQ
1,166
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 13A TO-220SIS DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 650V 13A (Ta) 380 mOhm @ 6.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V