Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI4442DY-T1-GE3
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Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.6W (Ta) N-Channel 30V 15A (Ta) 4.5 mOhm @ 22A, 10V 1.5V @ 250µA 50nC @ 4.5V - 2.5V, 10V ±12V
SI4442DY-T1-E3
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3,340
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Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.6W (Ta) N-Channel 30V 15A (Ta) 4.5 mOhm @ 22A, 10V 1.5V @ 250µA 50nC @ 4.5V - 2.5V, 10V ±12V
SI4442DY-T1-E3
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2,600
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Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.6W (Ta) N-Channel 30V 15A (Ta) 4.5 mOhm @ 22A, 10V 1.5V @ 250µA 50nC @ 4.5V - 2.5V, 10V ±12V
SI4442DY-T1-E3
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RFQ
3,762
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Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.6W (Ta) N-Channel 30V 15A (Ta) 4.5 mOhm @ 22A, 10V 1.5V @ 250µA 50nC @ 4.5V - 2.5V, 10V ±12V