- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
928
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | 4-DIP (0.300", 7.62mm) | 4-HVMDIP | - | P-Channel | - | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | - | - | |||
|
VIEW |
1,301
In-stock
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Infineon Technologies | MOSFET P-CH 30V 760MA SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 30V | 760mA (Ta) | 600 mOhm @ 600mA, 10V | 1V @ 250µA | 5.1nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
708
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,511
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 1A HEXDIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | 4-DIP (0.300", 7.62mm) | 4-HVMDIP | - | P-Channel | - | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | - | - | |||
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|
VIEW |
2,726
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,579
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 760MA SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 30V | 760mA (Ta) | 600 mOhm @ 600mA, 10V | 1V @ 250µA | 5.1nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,368
In-stock
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Infineon Technologies | MOSFET P-CH 30V 760MA SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 30V | 760mA (Ta) | 600 mOhm @ 600mA, 10V | 1V @ 250µA | 5.1nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,835
In-stock
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Infineon Technologies | MOSFET P-CH 30V 760MA SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 30V | 760mA (Ta) | 600 mOhm @ 600mA, 10V | 1V @ 250µA | 5.1nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V | |||
