Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLML0060TRPBF
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Infineon Technologies MOSFET N-CH 60V 2.7A SOT-23-3 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) N-Channel - 60V 2.7A (Ta) 92 mOhm @ 2.7A, 10V 2.5V @ 25µA 2.5nC @ 4.5V 290pF @ 25V 4.5V, 10V ±16V
IRLML0060TRPBF
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Infineon Technologies MOSFET N-CH 60V 2.7A SOT-23-3 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) N-Channel - 60V 2.7A (Ta) 92 mOhm @ 2.7A, 10V 2.5V @ 25µA 2.5nC @ 4.5V 290pF @ 25V 4.5V, 10V ±16V
IRLML0060TRPBF
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Infineon Technologies MOSFET N-CH 60V 2.7A SOT-23-3 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) N-Channel - 60V 2.7A (Ta) 92 mOhm @ 2.7A, 10V 2.5V @ 25µA 2.5nC @ 4.5V 290pF @ 25V 4.5V, 10V ±16V