- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,684
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 5.9A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 30V | 5.9A (Ta) | 60 mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | 300pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,443
In-stock
|
Infineon Technologies | MOSFET NCH 55V 5A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,397
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,754
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5A SOT-223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
2,219
In-stock
|
Infineon Technologies | MOSFET NCH 55V 5A SOT223 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
VIEW |
3,528
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 3A SOT23 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 2.7nC @ 10V | 551.57pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,553
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 2.7nC @ 10V | 551.57pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,366
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 3A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 2.7nC @ 10V | 551.57pF @ 15V | 4.5V, 10V | ±20V | |||
-Exposed-Pad.jpg)
|
VIEW |
1,453
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 4.7A 8SOP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2.1W (Tc) | P-Channel | - | 30V | 4.7A (Tc) | 60 mOhm @ 3A, 10V | 2.5V @ 250µA | 9.6nC @ 4.5V | 560pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,769
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 4.7A 8SOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2.1W (Tc) | P-Channel | - | 30V | 4.7A (Tc) | 60 mOhm @ 3A, 10V | 2.5V @ 250µA | 9.6nC @ 4.5V | 560pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,151
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 4.7A 8SOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2.1W (Tc) | P-Channel | - | 30V | 4.7A (Tc) | 60 mOhm @ 3A, 10V | 2.5V @ 250µA | 9.6nC @ 4.5V | 560pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,606
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
3,349
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
3,714
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
