Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM320N03CX RFG
RFQ
VIEW
RFQ
2,937
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 5.5A SOT23 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.8W (Tc) N-Channel 30V 5.5A (Tc) 32 mOhm @ 4A, 4.5V 900mV @ 250µA 8.9nC @ 4.5V 792pF @ 15V 2.5V, 4.5V ±12V
TSM320N03CX RFG
RFQ
VIEW
RFQ
3,414
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 5.5A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.8W (Tc) N-Channel 30V 5.5A (Tc) 32 mOhm @ 4A, 4.5V 900mV @ 250µA 8.9nC @ 4.5V 792pF @ 15V 2.5V, 4.5V ±12V
TSM320N03CX RFG
RFQ
VIEW
RFQ
2,125
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 5.5A SOT23 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.8W (Tc) N-Channel 30V 5.5A (Tc) 32 mOhm @ 4A, 4.5V 900mV @ 250µA 8.9nC @ 4.5V 792pF @ 15V 2.5V, 4.5V ±12V
SI2365EDS-T1-GE3
RFQ
VIEW
RFQ
3,951
In-stock
Vishay Siliconix MOSFET P-CH 20V 5.9A TO-236 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 1W (Ta), 1.7W (Tc) P-Channel 20V 5.9A (Tc) 32 mOhm @ 4A, 4.5V 1V @ 250µA 36nC @ 8V - 1.8V, 4.5V ±8V
SI2365EDS-T1-GE3
RFQ
VIEW
RFQ
903
In-stock
Vishay Siliconix MOSFET P-CH 20V 5.9A TO-236 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 1W (Ta), 1.7W (Tc) P-Channel 20V 5.9A (Tc) 32 mOhm @ 4A, 4.5V 1V @ 250µA 36nC @ 8V - 1.8V, 4.5V ±8V
SI2365EDS-T1-GE3
RFQ
VIEW
RFQ
1,329
In-stock
Vishay Siliconix MOSFET P-CH 20V 5.9A TO-236 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 1W (Ta), 1.7W (Tc) P-Channel 20V 5.9A (Tc) 32 mOhm @ 4A, 4.5V 1V @ 250µA 36nC @ 8V - 1.8V, 4.5V ±8V
DMP1045UFY4-7
RFQ
VIEW
RFQ
2,087
In-stock
Diodes Incorporated MOSFET P-CH 12V 5.5A DFN2015-3 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN - 700mW (Ta) P-Channel 12V 5.5A (Ta) 32 mOhm @ 4A, 4.5V 1V @ 250µA 23.7nC @ 8V 1291pF @ 10V 1.8V, 4.5V ±8V
DMP1045UFY4-7
RFQ
VIEW
RFQ
2,389
In-stock
Diodes Incorporated MOSFET P-CH 12V 5.5A DFN2015-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN - 700mW (Ta) P-Channel 12V 5.5A (Ta) 32 mOhm @ 4A, 4.5V 1V @ 250µA 23.7nC @ 8V 1291pF @ 10V 1.8V, 4.5V ±8V
DMP1045UFY4-7
RFQ
VIEW
RFQ
2,324
In-stock
Diodes Incorporated MOSFET P-CH 12V 5.5A DFN2015-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN - 700mW (Ta) P-Channel 12V 5.5A (Ta) 32 mOhm @ 4A, 4.5V 1V @ 250µA 23.7nC @ 8V 1291pF @ 10V 1.8V, 4.5V ±8V