Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SSM3J307T(TE85L,F)
RFQ
VIEW
RFQ
1,323
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A TSM U-MOSV Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel 20V 5A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 1mA 19nC @ 4.5V 1170pF @ 10V 1.5V, 4.5V ±8V
SSM3J307T(TE85L,F)
RFQ
VIEW
RFQ
1,998
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A TSM U-MOSV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel 20V 5A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 1mA 19nC @ 4.5V 1170pF @ 10V 1.5V, 4.5V ±8V
SSM3J307T(TE85L,F)
RFQ
VIEW
RFQ
814
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A TSM U-MOSV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel 20V 5A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 1mA 19nC @ 4.5V 1170pF @ 10V 1.5V, 4.5V ±8V
DMP1045UQ-7
RFQ
VIEW
RFQ
1,448
In-stock
Diodes Incorporated MOSFET BVDSS: 8V 24V SOT23 T&R 3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 800mW (Ta) P-Channel 12V 4A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 250µA 15.8nC @ 4.5V 1357pF @ 10V 1.8V, 4.5V ±8V
DMP1045U-7
RFQ
VIEW
RFQ
1,814
In-stock
Diodes Incorporated MOSFET P-CH 12V 4A SOT23 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 800mW (Ta) P-Channel 12V 4A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 250µA 15.8nC @ 4.5V 1357pF @ 10V 1.8V, 4.5V ±8V
DMP1045U-7
RFQ
VIEW
RFQ
2,810
In-stock
Diodes Incorporated MOSFET P-CH 12V 4A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 800mW (Ta) P-Channel 12V 4A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 250µA 15.8nC @ 4.5V 1357pF @ 10V 1.8V, 4.5V ±8V
DMP1045U-7
RFQ
VIEW
RFQ
1,426
In-stock
Diodes Incorporated MOSFET P-CH 12V 4A SOT23 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 800mW (Ta) P-Channel 12V 4A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 250µA 15.8nC @ 4.5V 1357pF @ 10V 1.8V, 4.5V ±8V