Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M004A090H
RFQ
VIEW
RFQ
1,230
In-stock
Global Power Technologies Group MOSFET N-CH 900V 4A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 123W (Tc) N-Channel 900V 4A (Tc) 4 Ohm @ 2A, 10V 4V @ 250µA 25nC @ 10V 955pF @ 25V 10V ±30V
GP1M004A090FH
RFQ
VIEW
RFQ
768
In-stock
Global Power Technologies Group MOSFET N-CH 900V 4A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38.7W (Tc) N-Channel 900V 4A (Tc) 4 Ohm @ 2A, 10V 4V @ 250µA 25nC @ 10V 955pF @ 25V 10V ±30V
APT4M120K
RFQ
VIEW
RFQ
3,219
In-stock
Microsemi Corporation MOSFET N-CH 1200V 5A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 225W (Tc) N-Channel 1200V 5A (Tc) 4 Ohm @ 2A, 10V 5V @ 1mA 43nC @ 10V 1385pF @ 25V 10V ±30V
TSM4N90CI C0G
RFQ
VIEW
RFQ
1,267
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 4A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 38.7W (Tc) N-Channel 900V 4A (Tc) 4 Ohm @ 2A, 10V 4V @ 250µA 25nC @ 10V 955pF @ 25V 10V ±30V
TSM4N90CZ C0G
RFQ
VIEW
RFQ
730
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 38.7W (Tc) N-Channel 900V 4A (Tc) 4 Ohm @ 2A, 10V 4V @ 250µA 25nC @ 10V 955pF @ 25V 10V ±30V