Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW27N60M2-EP
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3,664
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STMicroelectronics MOSFET N-CH 600V 20A TO-220 MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 170W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V
STF27N60M2-EP
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1,332
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STMicroelectronics MOSFET N-CH 600V 20A TO-220FP MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V
STP27N60M2-EP
RFQ
VIEW
RFQ
719
In-stock
STMicroelectronics MOSFET N-CH 600V 20A TO-220 MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 170W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V