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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFIBC40G	RFQ VIEW	PDF RFQ	993 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.5A TO220FP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3	40W (Tc)	N-Channel	600V	3.5A (Tc)	1.2 Ohm @ 2.1A, 10V	4V @ 250µA	60nC @ 10V	1300pF @ 25V	10V	±20V
	IRFIBC40GLC	RFQ VIEW	PDF RFQ	2,150 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.5A TO220FP		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3	40W (Tc)	N-Channel	600V	3.5A (Tc)	1.2 Ohm @ 2.1A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±20V
	IRFIBC40GLCPBF	RFQ VIEW	PDF RFQ	3,448 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.5A TO220FP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3	40W (Tc)	N-Channel	600V	3.5A (Tc)	1.2 Ohm @ 2.1A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±20V
	IRFIBC40GPBF	RFQ VIEW	PDF RFQ	1,120 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.5A TO220FP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3	40W (Tc)	N-Channel	600V	3.5A (Tc)	1.2 Ohm @ 2.1A, 10V	4V @ 250µA	60nC @ 10V	1300pF @ 25V	10V	±20V

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