Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9317PBF
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Infineon Technologies MOSFET P-CH 30V 16A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 16A (Ta) 6.6 mOhm @ 16A, 10V 2.4V @ 50µA 92nC @ 10V 2820pF @ 15V 4.5V, 10V ±20V
IRF9317TRPBF
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Infineon Technologies MOSFET P-CH 30V 16A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 16A (Ta) 6.6 mOhm @ 16A, 10V 2.4V @ 50µA 92nC @ 10V 2820pF @ 15V 4.5V, 10V ±20V
IRF9317TRPBF
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Infineon Technologies MOSFET P-CH 30V 16A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 16A (Ta) 6.6 mOhm @ 16A, 10V 2.4V @ 50µA 92nC @ 10V 2820pF @ 15V 4.5V, 10V ±20V
IRF9317TRPBF
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Infineon Technologies MOSFET P-CH 30V 16A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 16A (Ta) 6.6 mOhm @ 16A, 10V 2.4V @ 50µA 92nC @ 10V 2820pF @ 15V 4.5V, 10V ±20V