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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFSL11N50A	RFQ VIEW	PDF RFQ	2,666 In-stock	Vishay Siliconix	MOSFET N-CH 500V 11A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262-3	190W (Tc)	N-Channel	500V	11A (Tc)	550 mOhm @ 6.6A, 10V	4V @ 250µA	51nC @ 10V	1426pF @ 25V	10V	±30V
	IRFP340	RFQ VIEW	PDF RFQ	3,255 In-stock	Vishay Siliconix	MOSFET N-CH 400V 11A TO-247AC		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3	150W (Tc)	N-Channel	400V	11A (Tc)	550 mOhm @ 6.6A, 10V	4V @ 250µA	62nC @ 10V	1400pF @ 25V	10V	±20V
	IRFP340PBF	RFQ VIEW	PDF RFQ	2,188 In-stock	Vishay Siliconix	MOSFET N-CH 400V 11A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3	150W (Tc)	N-Channel	400V	11A (Tc)	550 mOhm @ 6.6A, 10V	4V @ 250µA	62nC @ 10V	1400pF @ 25V	10V	±20V
	IRFSL11N50APBF	RFQ VIEW	PDF RFQ	1,247 In-stock	Vishay Siliconix	MOSFET N-CH 500V 11A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262-3	190W (Tc)	N-Channel	500V	11A (Tc)	550 mOhm @ 6.6A, 10V	4V @ 250µA	51nC @ 10V	1426pF @ 25V	10V	±30V

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