Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP9NK65Z
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1,829
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STMicroelectronics MOSFET N-CH 650V 6.4A TO-220 SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 650V 6.4A (Tc) 1.2 Ohm @ 3.2A, 10V 4.5V @ 100µA 41nC @ 10V 1145pF @ 25V 10V ±30V
STP9NK65ZFP
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3,058
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STMicroelectronics MOSFET N-CH 650V 6.4A TO-220FP SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 650V 6.4A (Tc) 1.2 Ohm @ 3.2A, 10V 4.5V @ 100µA 41nC @ 10V 1145pF @ 25V 10V ±30V