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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	SIHD6N80E-GE3	RFQ VIEW	PDF RFQ	658 In-stock	Vishay Siliconix	MOSFET N-CHAN 800V TO-252		E	Active	Bulk	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	78W (Tc)	N-Channel	-	800V	5.4A (Tc)	940 mOhm @ 3A, 10V	4V @ 250µA	44nC @ 10V	827pF @ 100V	10V	±30V
	SIHA6N80E-GE3	RFQ VIEW	PDF RFQ	1,886 In-stock	Vishay Siliconix	MOSFET N-CHAN 800V TO-220FP		E	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220 Full Pack	31W (Tc)	N-Channel	-	800V	5.4A (Tc)	940 mOhm @ 3A, 10V	4V @ 250µA	44nC @ 10V	827pF @ 100V	10V	±30V
	SIHP6N80E-GE3	RFQ VIEW	PDF RFQ	3,480 In-stock	Vishay Siliconix	MOSFET N-CHAN 800V TO-220AB		E	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	78W (Tc)	N-Channel	-	800V	5.4A (Tc)	940 mOhm @ 3A, 10V	4V @ 250µA	44nC @ 10V	827pF @ 100V	10V	±30V
	SIHU6N80E-GE3	RFQ VIEW	PDF RFQ	2,073 In-stock	Vishay Siliconix	MOSFET N-CHAN 800V TO-251		E	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Long Leads, IPak, TO-251AB	IPAK (TO-251)	78W (Tc)	N-Channel	-	800V	5.4A (Tc)	940 mOhm @ 3A, 10V	4V @ 250µA	44nC @ 10V	827pF @ 100V	10V	±30V

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