Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSS806NL6327HTSA1
RFQ
VIEW
RFQ
2,208
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS806NEH6327XTSA1
RFQ
VIEW
RFQ
1,895
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 Automotive, AEC-Q101, HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 0.75V @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS806NEH6327XTSA1
RFQ
VIEW
RFQ
2,525
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 Automotive, AEC-Q101, HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 0.75V @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS806NEH6327XTSA1
RFQ
VIEW
RFQ
1,256
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 Automotive, AEC-Q101, HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 0.75V @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS806NH6327XTSA1
RFQ
VIEW
RFQ
3,825
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS806NH6327XTSA1
RFQ
VIEW
RFQ
910
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS806NH6327XTSA1
RFQ
VIEW
RFQ
3,297
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V