- Packaging :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
2,772
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 20V DFN1010D-3G | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 20V | 2.9A (Ta) | 85 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 608pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
|
VIEW |
1,014
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 20V DFN1010D-3G | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 20V | 2.9A (Ta) | 85 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 608pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
|
VIEW |
2,500
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 20V DFN1010D-3G | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 20V | 2.9A (Ta) | 85 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 608pF @ 10V | 1.2V, 4.5V | ±8V | |||
