Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor -20V -3.1A 95 O PCH ER T PowerTrench® Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-MicroFET (2x2) 1.4W (Ta) P-Channel Schottky Diode (Isolated) 20V 3.1A (Ta) 95 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10nC @ 4.5V 720pF @ 10V 2.5V, 4.5V ±12V
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ON Semiconductor MOSFET P-CH 20V 3.1A 2X2MLP PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 1.4W (Tj) P-Channel Schottky Diode (Isolated) 20V 3.1A (Ta) 95 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10nC @ 4.5V 720pF @ 10V 2.5V, 4.5V ±12V
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ON Semiconductor MOSFET P-CH 20V 3.1A 2X2MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 1.4W (Tj) P-Channel Schottky Diode (Isolated) 20V 3.1A (Ta) 95 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10nC @ 4.5V 720pF @ 10V 2.5V, 4.5V ±12V
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ON Semiconductor MOSFET P-CH 20V 3.1A 2X2MLP PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 1.4W (Tj) P-Channel Schottky Diode (Isolated) 20V 3.1A (Ta) 95 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10nC @ 4.5V 720pF @ 10V 2.5V, 4.5V ±12V