Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPI037N08N3GHKSA1
RFQ
VIEW
RFQ
1,725
In-stock
Infineon Technologies MOSFET N-CH 80V 100A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel - 80V 100A (Tc) 3.75 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 6V, 10V ±20V
IPP037N08N3GE8181XKSA1
RFQ
VIEW
RFQ
648
In-stock
Infineon Technologies MOSFET N-CH 80V 100A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 214W (Tc) N-Channel - 80V 100A (Tc) 3.75 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 6V, 10V ±20V
IPI037N08N3GXKSA1
RFQ
VIEW
RFQ
2,256
In-stock
Infineon Technologies MOSFET N-CH 80V 100A OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel - 80V 100A (Tc) 3.75 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 6V, 10V ±20V
IPP037N08N3GHKSA1
RFQ
VIEW
RFQ
855
In-stock
Infineon Technologies MOSFET N-CH 80V 100A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 214W (Tc) N-Channel - 80V 100A (Tc) 3.75 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 6V, 10V ±20V
IPP037N08N3GXKSA1
RFQ
VIEW
RFQ
980
In-stock
Infineon Technologies MOSFET N-CH 80V 100A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 214W (Tc) N-Channel - 80V 100A (Tc) 3.75 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 6V, 10V ±20V