- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,762
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
2,991
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
2,916
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
1,357
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
1,683
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
3,920
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
3,137
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
1,883
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
1,517
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
3,495
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
