Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFBG30
RFQ
VIEW
RFQ
1,067
In-stock
Vishay Siliconix MOSFET N-CH 1000V 3.1A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 1000V 3.1A (Tc) 5 Ohm @ 1.9A, 10V 4V @ 250µA 80nC @ 10V 980pF @ 25V 10V ±20V
IRFPG30
RFQ
VIEW
RFQ
1,890
In-stock
Vishay Siliconix MOSFET N-CH 1000V 3.1A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel 1000V 3.1A (Tc) 5 Ohm @ 1.9A, 10V 4V @ 250µA 80nC @ 10V 980pF @ 25V 10V ±20V
IRFPG30PBF
RFQ
VIEW
RFQ
674
In-stock
Vishay Siliconix MOSFET N-CH 1000V 3.1A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel 1000V 3.1A (Tc) 5 Ohm @ 1.9A, 10V 4V @ 250µA 80nC @ 10V 980pF @ 25V 10V ±20V
IRFBG30PBF
RFQ
VIEW
RFQ
3,087
In-stock
Vishay Siliconix MOSFET N-CH 1000V 3.1A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 1000V 3.1A (Tc) 5 Ohm @ 1.9A, 10V 4V @ 250µA 80nC @ 10V 980pF @ 25V 10V ±20V