Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF5305LPBF
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1,473
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Infineon Technologies MOSFET P-CH 55V 31A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305L
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742
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Infineon Technologies MOSFET P-CH 55V 31A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305STRR
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2,925
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
94-4582
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RFQ
3,732
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305STRRPBF
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1,128
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305PBF
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RFQ
1,862
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Infineon Technologies MOSFET P-CH 55V 31A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305STRLPBF
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RFQ
3,160
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305STRLPBF
RFQ
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RFQ
3,373
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305STRLPBF
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RFQ
954
In-stock
Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305SPBF
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RFQ
3,117
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V