Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9540NLPBF
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Infineon Technologies MOSFET P-CH 100V 23A TO262-3 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
IRF9540NSTRRPBF
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1,563
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Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
IRF9540NSTRRPBF
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3,732
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Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
IRF9540NSTRRPBF
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1,785
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Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
SIHG28N65EF-GE3
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905
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Vishay Siliconix MOSFET N-CH 650V 28A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 250W (Tc) N-Channel - 650V 28A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 146nC @ 10V 3249pF @ 100V 10V ±30V
SIHP28N65EF-GE3
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3,909
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Vishay Siliconix MOSFET N-CH 650V 28A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 650V 28A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 146nC @ 10V 3249pF @ 100V 10V ±30V
IRF9540NSTRLPBF
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1,169
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Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
IRF9540NSTRLPBF
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3,784
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Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
IRF9540NSTRLPBF
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3,104
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Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
IRF9540NSPBF
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2,562
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Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V